
Dmitry Messerman
Patents Messerman D., Hochman G. Method for extracting a resistor network from an integrated circuit polygon layout. - United... | Haifa, Haifa District, Israel
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Dmitry Messerman’s Location Haifa, Haifa District, Israel
Dmitry Messerman’s Expertise Patents Messerman D., Hochman G. Method for extracting a resistor network from an integrated circuit polygon layout. - United States Patent 5943487, 1999. Messerman D., Seltser M. Reorganizing rectangular layout structures for improved extraction. - United States Patent 7389001 B2, 2008. Chakravarty S., Ben-Noon Y., Chiprout E., Mazumder M., Messerman D. Inductance Modeling. - United States Patent 7325208 B2, 2008. Specialties: EDA software development, electrical engineering, electrophysics
Dmitry Messerman’s Current Industry Intel
Dmitry
Messerman’s Prior Industry
Niipt
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Frantztech
|
Intel
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Work Experience

Intel
Principal Engineer
Wed Jul 01 1992 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
Frantztech
Physicist And Software Engineer
Mon Oct 01 1990 00:00:00 GMT+0000 (Coordinated Universal Time) — Wed Jul 01 1992 00:00:00 GMT+0000 (Coordinated Universal Time)
Niipt
Researcher
Thu Apr 01 1982 00:00:00 GMT+0000 (Coordinated Universal Time) — Sun Apr 01 1990 00:00:00 GMT+0000 (Coordinated Universal Time)