
Vissarion Mikhelashvili
Research interests include: -MOS capacitors and field effect transistors for applications: in non-volatile memory systems driving by voltage and... | Haifa, Haifa District, Israel
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Vissarion Mikhelashvili’s Location Haifa, Haifa District, Israel
Vissarion Mikhelashvili’s Expertise Research interests include: -MOS capacitors and field effect transistors for applications: in non-volatile memory systems driving by voltage and light; current and capacitance photo sensors all based on bulk Si, SOI and Poly-Si substrates, high-k dielectrics and metallic (Au or Pt, processed by electron beam gun or atomic layer deposition) nano-particles (technologies and physics). - High-K metal oxide ultra thin single or nano laminate dielectric stacks for VLSI (technologies and physics). - Analysis of the I-V and C-V characteristics and methods of extraction of physical parameters (electric field independent or dependent Schottky and tunneling barrier heights, ideality factor and other parameters), of Schottky, P-N, PIN, MIM and MOS diodes. - Blue, green and red light emitting semiconductor diodes (technologies and physics). - Design and technology of multilayer optical stacks (anti reflection coatings, high reflection mirrors, band, short and long pass filters) applicable in semiconductor optical amplifiers and fiber optics. - Quantum Dash and Quantum Well laser diodes and optical amplifiers (physics and design). Full list of publications see in: - Google Scholar profile: https://scholar.google.co.il/citations?user=KtvYHWwAAAAJ&hl=en - ResearchGate profile: http://www.researchgate.net/profile/Vissarion_Beso_Mikhelashvili - Personal site: https://sites.google.com/site/vissarionmikhelashvili/home
Vissarion Mikhelashvili’s Current Industry Electrical Engineering Technion Israel Institute Of Technology
Vissarion
Mikhelashvili’s Prior Industry
Research Institute Of Microelectronics
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Electrical Engineering Technion Israel Institute Of Technology
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Work Experience

Electrical Engineering Technion Israel Institute Of Technology
Senior Research Fellow
Sat Aug 01 1992 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
Research Institute Of Microelectronics
Head Of Laboratory, Technology And Design Of New Optoelectronic Structure And Devices
Wed Jan 01 1986 00:00:00 GMT+0000 (Coordinated Universal Time) — Wed Jan 01 1992 00:00:00 GMT+0000 (Coordinated Universal Time)
Research Institute Of Microelectronics
Head Of Laboratory, Photoelectric And Luminescent Phenomena In Semiconductor Devices
Sat Jan 01 1983 00:00:00 GMT+0000 (Coordinated Universal Time) — Wed Jan 01 1986 00:00:00 GMT+0000 (Coordinated Universal Time)
Research Institute Of Microelectronics
Senior Staff Scientist, Department Of Optoelectronics
Thu Jan 01 1976 00:00:00 GMT+0000 (Coordinated Universal Time) — Sat Jan 01 1983 00:00:00 GMT+0000 (Coordinated Universal Time)